40 citations · 65 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 25 cited
Optical control of internal electric fields in band-gap graded InGaN nanowires
N. Erhard, A. T. M. Golam Sarwar, F. Yang +3
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN int…
cond-mat.mtrl-sci2012★ 40 cited
Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
S. D. Carnevale, C. Marginean, P. J. Phillips +4
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial…