Few Layer HfS2 FET

Abstract

2D materials are expected to be favorable channel materials for field-effect transistor (FET) with extremely short channel length because of their superior immunity to short-channel effects (SCE). Graphene, which is the most famous 2D material, has no bandgap without additional techniques and this property is major hindrance in reducing the drain leakage. Therefore, 2D materials with finite band gap, such as transition metal dichalcogenides (TMDs, e.g. MoS2 WSe2) or phosphorene, are required for the low power consumption FETs. Hafnium disulfide (HfS2) is a novel TMD, which has not been investigated as channel material. We focused on its potential for well-balanced mobility and bandgap properties. The higher electron affinity of Hf dichalcogenides compared with Mo or W chalcogenides facilitates the formation of low resistance contact and staggered heterojunction with other 2D materials. Here we demonstrate the first few layer HfS2 FET with robust current saturation and high current on/off ratio of more than 10^4.

16 pages, 10 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Making graphene visible
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Two dimensional semiconductors with possible high room temperature mobility

Cited by in corpus (14)

• Electronic Transport in Two-Dimensional Materials
• High yield synthesis and liquid exfoliation of two-dimensional belt like hafnium disulphide
• Electronic and optical excitations of two-dimensional ZrS${}_2$ and HfS${}_2$ and their heterostructure
• Chemical bonding and Born charge in 1T-HfS${}_2$
• Bulk and surface electronic states in the dosed semimetallic HfTe${}_2$
• The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field
• Localized Surface Plasmon Resonance on Two-Dimensional HfSe2 and ZrSe2
• Potassium-intercalated bulk HfS${}_2$ and HfSe${}_2$: Phase stability, structure, and electronic structure
• Predicting phase preferences of two-dimensional transition metal dichalcogenides using machine learning
• Enhanced exciton-exciton collisions in an ultra-flat monolayer MoSe2 prepared through deterministic flattening
• Mapping of the energetically lowest exciton in bulk $1T$-HfS${}_2$
• The effect of temperature and excitation energy on Raman scattering in bulk HfS${}_2$
• Pressure-induced optical anisotropy of HfS${}_2$
• Excitonic luminescence of iodine-intercalated HfS${}_2$