Multilayer C2N: Effect of Stacking Order and Number of Layers on Bandgap and Its Controlled Electronic Properties by External Electric Field
arXiv:1505.02584
Abstract
Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 1-7) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic properties. Using the few-layer C2N as models, we have performed an ab initio study of electronic properties of layered C2N. Band gaps of this system exhibit monotone decreasing as the number of layers increase. And a direct-gap to indirect-gap transition at the bulk C2N. Besides, when we apply an out-of-plane electric field on few-layer C2N, the band gap of multilayer C2N will be decreased as the electric field increased and a semiconductor-semimetal transition will happen for five-layer C2N under an appropriate electric field, whereas the band gap of monolayer C2N is unchanged under electric field. Owing to their tunable bandgaps in a wide range, layers C2N will have tremendous opportunities to be applied in nanoscale electronic and optoelectronic devices.
arXiv comment17 papges,5 figures
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- Atomically thin MoS2: A new direct-gap semiconductor
- Phosphorene: A New 2D Material with High Carrier Mobility
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- The interlayer cohesive energy of graphite from thermal desorption of polyaromatic hydrocarbons
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field
- Van der Waals trilayers and superlattices: Modification of electronic structures of MoS2 by intercalation