TiS3 transistors with tailored morphology and electrical properties

Abstract

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

28 pages, 4 figures, 1 table. Includes Supporting Information (9 figures, 2 tables)

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Cited by in corpus (8)

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• Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications
• Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3
• Strain control of the competition between metallic and semiconducting states in single-layers of TaSe${}_3$
• Screening Promising Thermoelectric Materials in Binary Chalcogenides through High-Throughput Computations