Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
arXiv:1502.04082 · doi:10.1063/1.4919761
Abstract
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.
4 pages, 3 figures, plus Supplemental Material (8 figures)
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