Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example

J. Barzola-Quiquia; T. Lehmann; M. Stiller; D. Spemann; P. Esquinazi; P. Häussler

doi:10.1063/1.4908007

paper

Topological Insulator Thin Films Starting from the Amorphous Phase - Bi $_{2}$ Se $_{3}$ as Example

arXiv:1502.01135 · doi:10.1063/1.4908007

Abstract

We present a new method to obtain topological insulator Bi $_{2}$ Se $_{3}$ thin films with a centimeter large lateral length. To produce amorphous Bi $_{2}$ Se $_{3}$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi $_{2}$ Se $_{3}$ crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures $T ≲ 50$ K and fields $B ≲ 1$ T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

8 pages, 9 figures, to be published in Journal of Applied Physics (2015)

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Low temperature Hall effect in bismuth chalcogenides thin films

Topological Insulator Thin Films Starting from the Amorphous Phase - Bi2​Se3​ as Example

Abstract

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Topological Insulator Thin Films Starting from the Amorphous Phase - Bi $_{2}$ Se $_{3}$ as Example