Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
arXiv:1501.06764 · doi:10.1038/ncomms7419
Abstract
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions, although still important, do not have an equally drastic effect, and these systems remain conducting at low temperature. It may be expected that interaction effects become weaker for thicker multilayers, whose behavior should eventually converge to that of graphite. Here we show that this expectation does not correspond to reality by investigating the case of Bernal-stacked tetralayer graphene (4LG). We reveal the occurrence of a robust insulating state in a narrow range of carrier densities around charge neutrality, incompatible with the behavior expected from the single-particle band structure. The phenomenology resembles that observed in bilayers, but the stronger conductance suppression makes the insulating state in 4LG visible at higher temperature. To account for our findings, we suggest a natural generalization of the interaction-driven, symmetry-broken states proposed for bilayers. This generalization also explains the systematic even-odd effect of interactions in Bernal-stacked layers of different thickness that is emerging from experiments, and has implications for the multilayer-to-graphite crossover.
15 pages, 5 figures, This is the original submitted version of the manuscript whose final accepted version, following the review/editorial process, will appear in Nature Communications
References in corpus (19)
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Suspended Graphene: a bridge to the Dirac point
- Electronic states and Landau levels in graphene stacks
- Chiral Decomposition in the Electronic Structure of Graphene Multilayers
- Orbital diamagnetism in multilayer graphenes: Systematic study with the effective mass approximation
- Pseudospin Magnetism in Graphene
- Magneto-optical properties of multilayer graphenes
- Quantum Anomalous Hall State in Bilayer Graphene
- Tunable Fractional Quantum Hall Phases in Bilayer Graphene
- Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Competing Nematic, Anti-ferromagnetic and Spin-flux orders in the Ground State of Bilayer Graphene
- Electric transport and magnetic properties in multilayer graphene
- Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
- Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer
- Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field
- Controllable, driven phase transitions in the Fractional quantum Hall states in bilayer graphene
- Probing electronic excitations in mono- to pentalayer graphene by micro-magneto-Raman spectroscopy
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- Interaction-induced insulating state in thick multilayer graphene
- Interaction-induced insulating states in multilayer graphenes
- Quantum spin Hall phase in multilayer graphene
- Field-induced insulating states in a graphene superlattice