Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

D. R. Islamov; T. V. Perevalov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4914900

paper

Charge transport in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$

arXiv:1501.02370 · doi:10.1063/1.4914900

Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ is phonon-assisted tunneling between traps like in HfO $_{2}$ and ZrO $_{2}$ . The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ was discussed.

4 pages, 3 figures, 1 table

Charge transport in amorphous Hf0.5​Zr0.5​O2​

Abstract

References in corpus (2)

Charge transport in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$