63 citations · 196 across the 9 of their papers we have counts for
9 papers
Changing the properties of HfZrO during cyclic repolarization of ferroelectric capacitors with different electrode materials
Timur M. Zalyalov, Damir R. Islamov
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxi…
The charge transport mechanism and electron trap nature in thermal oxide on silicon
Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov +2
The charge transport mechanism of electron via traps in amorphous SiO has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and op…
Charge transport in amorphous HfZrO
D. R. Islamov, T. V. Perevalov, V. A. Gritsenko +2
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous HfZrO is phonon-assisted tunneling between trap…
Percolation conductivity in hafnium sub-oxides
D. R. Islamov, V. A. Gritsenko, C. H. Cheng +1
In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO, ) leads to percolation charge transport…
Origin of traps and charge transport mechanism in hafnia
D. R. Islamov, V. A. Gritsenko, C. H. Cheng +1
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO. Basing on the model of phonon-assisted tu…
Origin of defects responsible for charge transport in resistive random access memory based on hafnia
Damir R. Islamov, T. V. Perevalov, V. A. Gritsenkov +7
A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile fla…