Origin of traps and charge transport mechanism in hafnia

Abstract

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO${}_2$. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO${}_2$ was determined based on the charge transport experiments.

5 pages, 5 figures

Cited by in corpus (2)

• Charge transport in amorphous Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$
• Percolation conductivity in hafnium sub-oxides