49 citations · 137 across the 7 of their papers we have counts for
7 papers
Temperature dependence of self-trapped exciton luminescence in nanostructured hafnia powder
A. O. Shilov, S. S. Savchenko, A. S. Vokhmintsev +2
The intrinsic optical properties and peculiarities of the energy structure of hafnium dioxide largely determine the prospects for applying the latter in new generation devices of o…
The charge transport mechanism and electron trap nature in thermal oxide on silicon
Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov +2
The charge transport mechanism of electron via traps in amorphous SiO has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and op…
Charge transport in amorphous HfZrO
D. R. Islamov, T. V. Perevalov, V. A. Gritsenko +2
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous HfZrO is phonon-assisted tunneling between trap…
Percolation conductivity in hafnium sub-oxides
D. R. Islamov, V. A. Gritsenko, C. H. Cheng +1
In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO, ) leads to percolation charge transport…
Origin of traps and charge transport mechanism in hafnia
D. R. Islamov, V. A. Gritsenko, C. H. Cheng +1
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO. Basing on the model of phonon-assisted tu…
Memory Effect in Silicon Nitride in Silicon Devices
V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov +1
The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low…