Protected edge states in silicene antidots and dots in magnetic field
arXiv:1412.6972 · doi:10.1103/PhysRevB.91.125412
Abstract
Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propagating over the perimeter of the antidot/dot for both ideal or realistic edge termination containing roughness on the atomic length scale. The valley polarization and the slope of the energy line as a function of the magnetic field is, however, reduced when the antidot or dot has a rough edge.
10 pages, 7 figure
References in corpus (15)
- Photo-Induced Topological Phase Transition and a Single Dirac-Cone State in Silicene
- Magnetic confinement of massless Dirac fermions in graphene
- Spin-Valleytronics in Silicene: Quantum-Spin-Quantum-Anomalous Hall Insulators and Single-Valley Semimetals
- Observation of excited states in a graphene quantum dot
- Analytic Model for the Energy Spectrum of a Graphene Quantum Dot in a Perpendicular Magnetic Field
- Realization of free-standing silicene using bilayer graphene
- Bound states in inhomogeneous magnetic field in graphene: a semiclassical approach
- Quantum Hall Effects in Silicene
- Tunable resonances due to vacancies in graphene nanoribbons
- Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction
- Dirac model of electronic transport in graphene antidot barriers
- Electronic properties of a graphene antidot in magnetic fields
- Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field
- Solid argon as a possible substrate for quasi-freestanding silicene
- Edge states for the n=0 Laudau level in graphene