High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

Abstract

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.

12 pages, 5 figures

References in corpus (1)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors

Cited by in corpus (4)

• Edge transport in InAs and InAs/GaSb quantum wells
• Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
• Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
• Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells