Towards high mobility InSb nanowire devices

Abstract

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim 2.5\times 10^4$ cm${}^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

13 pages, 5 figures (main text); 7 pages, 2 figures, 2 tables (supplementary text)

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• Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb