Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility

Abstract

Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, InxSn1-xTe, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of InxSn1-xTe such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in InxSn1-xTe nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors.

References in corpus (12)

• Topological Crystalline Insulators
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• Linear magnetoresistance on the topological surface
• Superconducting properties of the In substituted Topological Crystalline Insulator, SnTe
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• Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators
• Topological Crystalline Insulator Nanostructures

Cited by in corpus (2)

• Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films
• FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance