Electronic Structure of Epitaxial Single-Layer MoS${}_2$

Abstract

The electronic structure of epitaxial single-layer MoS${}_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\bar{\Gamma }$ having a significantly higher binding energy than at $\bar{K}$. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at $\bar{K}$ is found to be lifted by the spin-orbit interaction, leading to a splitting of (145$\pm$4)~meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the strength of the potassium doping is $k$-dependent, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.

5 pages, 3 figures

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• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
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