Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

Abstract

The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide spectroscopic evidence for the presence of distinct chemical and electronic behavior for surface and bulk magnetic doping of Bi2Te3. The inclusion of Mn in the bulk of Bi2Te3 induces a genuine dilute ferromagnetic state, with reduction of the bulk band gap as the Mn content is increased. Deposition of Fe on the Bi2Te3 surface, on the other hand, favors the formation of iron telluride already at coverages as low as 0.07 monolayer, as a consequence of the reactivity of the Te-rich surface. Our results identify the factors that need to be controlled in the realization of magnetic nanosystems and interfaces based on TIs.

References in corpus (3)

• Theory of ferromagnetic (III,Mn)V semiconductors
• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator

Cited by in corpus (9)

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• Fe/GeTe(111) heterostructures as an avenue towards 'ferroelectric Rashba semiconductors'-based spintronics
• Distinct Effects of Cr Bulk Doping and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3
• Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb and Fe
• Experimental demonstration of a magnetically induced warping transition in a topological insulator mediated by rare-earth surface dopants
• Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
• Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts