Distinct Effects of Cr Bulk Doping and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3

Abstract

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.

References in corpus (22)

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators in Three Dimensions
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Topological Field Theory of Time-Reversal Invariant Insulators
• Magnetic impurities on the surface of a topological insulator
• A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
• Giant Magneto-optical Kerr Effect and Universal Faraday Effect in Thin-film Topological Insulators
• Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator
• Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
• Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization
• Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators
• Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi${}_2$Se${}_3$ Topological Insulator
• Tolerance of topological surface states towards magnetic moments: Fe on Bi2Te3 and Bi2Se3
• Sources of experimental errors in the observation of nanoscale magnetism
• Fully gapped topological surface states in Bi${}_2$Se${}_3$ films induced by a d-wave high-temperature superconductor
• Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi${}_{1-x}$Mn${}_x{)}_2$Se${}_3$
• Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
• Filling of magnetic-impurity-induced gap in topological insulators by potential scattering
• Topological phase transitions in (Bi${}_{1-x}$In${}_x{)}_2$Se${}_3$ and (Bi${}_{1-x}$Sb${}_x{)}_2$Se${}_3$
• Robust gapless surface state and Rashba-splitting bands upon surface deposition of magnetic Cr on Bi${}_2$Se${}_3$
• Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

Cited by in corpus (2)

• Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface
• Pb-doped p-type Bi${}_2$Se${}_3$ thin films via interfacial engineering