Enhanced architectures for room-temperature reversible logic gates in graphene

Abstract

We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a monolayer graphene flake. These low-dissipation gates are based on the unique properties of ballistic charge carriers in graphene, which induce the appearance of bandgaps in transmission for properly potential barriers. The enhanced architectures for reversible logic gate implementations proposed in this paper offer a remarkable design simplification in comparison to standard approaches based on field-effect transistor circuits and a potential high-frequency operation.

References in corpus (4)

• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Integrated complementary graphene inverter
• Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
• Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate