Ferroelectric domain triggers the charge modulation in semiconductors
arXiv:1312.5633 · doi:10.1063/1.4891310
Abstract
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-degree domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single domain limit. Obtained analytical results open the way for understanding of current AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers.
28 pages, 9 figures, 2 tables, Supplementary materials
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Cited by in corpus (9)
- P-N junctions dynamics in graphene channel induced by ferroelectric domains motion
- Ferroelectric domain triggers the charge modulation in semiconductors
- Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
- Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
- Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate
- Nontrivial temperature behavior of the carrier concentration in the nanostructure "graphene channel on ferroelectric substrate with domain walls"
- Graphene separation and stretching induced by piezoelectric effect of ferroelectric domains: impact on the conductance of graphene channel
- Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate
- Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall