158 citations · 4.5k across the 228 of their papers we have counts for
233 papers
Pyroelectric and electrocaloric properties of core-shell HfxZr1-xO2 nanoparticles: theory and experiment
Anna N. Morozovska, Oleksandr S. Pylypchuk, Nicholas V. Morozovsky +2
Nanosized hafnia-zirconia (HfxZr1-xO2) in the form of thin films, multilayers, and nanoparticles is one of the most promising CMOS-compatible ferroelectric materials for advanced e…
Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Valentin V. Laguta +13
In this work we study the stabilization of the orthorhombic phases in small Hf0.5Zr0.5O2 nanoparticles (average size ~ 7 nm) annealed under different oxygen partial pressures. Conc…
Correlations Between the Dielectric Properties, Domain Structure Morphology and Phase State of Bi1-xSmxFeO3 Nanoparticles
Oleksandr S. Pylypchuk, Vladyslav O. Kolupaiev, Victor V. Vainberg +5
Nanoscale multiferroics are basic model objects for studying polar, magnetic and magnetoelectric properties and mutual couplings. Bismuth-samarium ferrite (Bi1-xSmxFeO3) is a model…
Stress-Induced Ferroelectricity in Hafnium Oxide Core-Shell Nanoparticles
Anna N. Morozovska, Eugene A. Eliseev, Richard +3
In contrast to hafnia (HfO2) thin films, where the appearance of switchable ferroelectric polarization can be induced by strain or defect engineering, reliable methods for controll…
Electric Charge Transport and Dielectric Properties of the Barium Titanate Ceramics Obtained by Spark-Plasma Sintering with Different Carbon Content
Oleksandr S. Pylypchuk, Victor V. Vainberg, Denis O. Stetsenko +9
Barium titanate (BaTiO3) ceramics with a different content of carbon were synthesized by spark-plasma sintering (SPS) at the temperature of 1100 C in vacuum under pressure. The con…
Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin +1
Nanosized hafnia-zirconia HfxZr1-xO2 in the form of thin films, multilayers and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electroni…