91 citations · 849 across the 29 of their papers we have counts for
4 papers · 1 filter
Modeling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects
Anna N. Morozovska, Eugene A. Eliseev
We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly…
Peculiarities of polarization switching in ferroelectric semiconductors with charged inhomogeneities
Anna N. Morozovska, Eugeny A. Eliseev
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity…
Phenomenological Description of Disordering in Ferroelectric Materials Caused by Charged Defects
Anna N. Morozovska, Eugeny A. Eliseev
We propose the phenomenological description of ferroelectric disordering in ferroelectric-semiconductors caused by charged impurities with the charge density random fluctuations. T…
Internal electric field originated from mismatch effect and its influence on ferroelectric thin film properties
M. D. Glinchuk, A. N. Morozovska
The ferroelectric thin film properties were calculated in phenomenological theory framework. Surface energy that defined boundary conditions for Euler-Lagrange differential equatio…