Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire

Abstract

The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied two operation modes of the spin transistor: (A) the ideal operation mode with the full spin polarization of electrons in the contacts, the zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the more realistic operation mode with the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For mode (A) the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for mode (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for mode (B) have been compared with the recent experimental data and a good agreement has been found.

8 pages, 11 figures

References in corpus (17)

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• Non-ballistic spin field-effect transistor
• Spin Hall effect transistor
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• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
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• Magnetotransport properties of individual InAs nanowires
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• Spin control in semiconductor quantum wires
• Rashba spin orbit interaction in a quantum wire superlattice
• Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunneling diode
• Conductance oscillations of a spin-orbit stripe with polarized contacts

Cited by in corpus (14)

• Tuning Rashba spin-orbit coupling in homogeneous semiconductor nanowires
• Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi${}_2$Se${}_3$
• Electron spin rotations induced by oscillating Rashba interaction in a quantum wire
• Enhanced Rashba spin-orbit coupling in core-shell nanowires by the interfacial effect
• Levitons in helical liquids with Rashba spin-orbit coupling probed by a superconducting contact
• Anisotropy of the spin-orbit coupling driven by a magnetic field in InAs nanowires
• Interplay between Rashba interaction and electromagnetic field in the edge states of a 2D topological insulator
• Spin filtering effect generated by the inter-subband spin-orbit coupling in the bilayer nanowire with the quantum point contact
• Interplay between resonant tunneling and spin precession oscillations in all-electric all-semiconductor spin transistors
• Detection of spin entanglement via spin-charge separation in crossed Tomonaga-Luttinger liquids
• Generation of spin-dependent coherent states in a quantum wire
• Seebeck effects in two-dimensional spin transistors
• Resonant Landau-Zener transitions in helical magnetic fields
• Helical and topological phase detection based on nonlocal conductance measurements in a three terminal junction