Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study

Abstract

A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at much lower In composition than expected from a VCA approach.

5 pages, 4 figures, 2 tables

Cited by in corpus (5)

• Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides
• Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
• Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
• Impact of cation-based localized electronic states on the conduction and valence band structure of AlInN alloys
• Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations