Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Abstract

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

3 figures, 1 table, ~4 pages

References in corpus (3)

• Strongly disordered TiN and NbTiN s-wave superconductors probed by microwave electrodynamics
• Microwave properties of superconducting atomic-layer deposited TiN films
• Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Cited by in corpus (5)

• The role of Coulomb interaction in superconducting NbTiN thin films
• Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride
• Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
• Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition
• Giant two-phonon Raman scattering from nanoscale NbC precipitates in Nb