Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

arXiv commentSubmitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires

References in corpus (6)

• Twinning superlattices in indium phosphide nanowires
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
• Predicted band structures of III-V semiconductors in wurtzite phase
• GW band structure of InAs and GaAs in the wurtzite phase
• Correlating the nanostructure and electronic properties of InAs nanowires
• The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Cited by in corpus (3)

• The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
• Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
• Post-growth shaping and transport anisotropy in 2D InAs nanofins