34 citations · 140 across the 7 of their papers we have counts for
7 papers
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry
D. J. Carrad, A. B. Mostert, A. R. Ullah +8
A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the tw…
Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
Sofia Fahlvik Svensson, Adam M. Burke, Damon J. Carrad +3
We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometr…
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
A. R. Ullah, H. J. Joyce, A. M. Burke +3
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter.…
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices
A. M. Burke, O. Klochan, I. Farrer +3
Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-bo…
The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots
A. M. See, I. Pilgrim, B. C. Scannell +10
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, lead…