EUV induced defects on few-layer graphene
arXiv:1304.4395 · doi:10.1063/1.4817082
Abstract
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.
5 pages 4 figures
References in corpus (11)
- The Raman Fingerprint of Graphene
- Graphene: Status and Prospects
- Two Dimensional Atomic Crystals
- Ultrahigh electron mobility in suspended graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Control of graphene's properties by reversible hydrogenation
- Probing the Nature of Defects in Graphene by Raman Spectroscopy
- Chemical functionalization of graphene with defects
- Modification of Graphene Properties due to Electron-Beam Irradiation
- Effects of topological defects and local curvature on the electronic properties of planar graphene
- Instability of two dimensional graphene: Breaking sp2 bonds with soft X-rays