activity
20072016
most citedCharacterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

236 citations · 515 across the 16 of their papers we have counts for

collaborators

16 papers

physics.plasm-ph2016★ 30 cited

Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen

D. I. Astakhov, W. J. Goedheer, C. J. Lee +8

We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by micro…

physics.plasm-ph2015★ 1 cited

Numerical and experimental studies of the carbon etching in EUV-induced plasma

D. I. Astakhov, W. J. Goedheer, C. J. Lee +6

We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced p…

physics.plasm-ph2014★ 10 cited

Plasma probe characteristics in low density hydrogen pulsed plasmas

D. I. Astakhov, W. J. Goedheer, C. J. Lee +6

Probe theories are only applicable in the regime where the probe's perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particu…

cond-mat.mtrl-sci2014★ 236 cited

Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

A Dolgov, D Lopaev, C J Lee +4

Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiati…

physics.plasm-ph2014★ 25 cited

Discharge-produced plasma extreme ultraviolet (EUV) source and ultra high vacuum chamber for studying EUV-induced processes

A Dolgov, O Yakushev, A Abrikosov +4

An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma…

physics.optics2014★ 90 cited

High confinement, high yield Si3N4 waveguides for nonlinear optical application

Jörn P. Epping, Marcel Hoekman, Richard Mateman +6

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical application…