activity
20132015
most citedCharacterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

236 citations · 355 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2015★ 61 cited

Emissivity of freestanding membranes with thin metal coatings

P. J. van Zwol, D. F. Vles, W. P. Voorthuijzen +5

Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membra…

cond-mat.mtrl-sci2014★ 236 cited

Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

A Dolgov, D Lopaev, C J Lee +4

Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiati…

physics.plasm-ph2014★ 25 cited

Discharge-produced plasma extreme ultraviolet (EUV) source and ultra high vacuum chamber for studying EUV-induced processes

A Dolgov, O Yakushev, A Abrikosov +4

An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma…

cond-mat.mtrl-sci2014★ 13 cited

Graphene defect formation by extreme ultraviolet generated photoelectrons

A. Gao, C. J. Lee, F. Bijkerk

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we…

physics.optics2013★ 8 cited

Model independent X-ray standing wave analysis of periodic multilayer structures

S. N. Yakunin, I. A. Makhotkin, M. A. Chuev +9

We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield…

cond-mat.mtrl-sci2013★ 12 cited

EUV induced defects on few-layer graphene

A. Gao, P. J. Rizo, E. Zoethout +4

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing dens…