Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures
arXiv:1211.4778 · doi:10.1063/1.4790844
Abstract
The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination.
4 pages, 3 figures
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Cited by in corpus (5)
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- Transport and thermoelectric properties of the LaAlO/SrTiO interface
- Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO/SrTiO interface
- Understanding the onset of negative electronic compressibility in one- and two-band 2D electron gases: Application to LaAlO/SrTiO
- Manipulating electronic states at oxide interfaces using focused micro X-rays from standard lab-sources