High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

Abstract

In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral TiO2 surface of (001)SrTiO3 has been shown to sustain 2DEL. We show that this restriction can be surpassed: (110) and (111) surfaces of SrTiO3 interfaced with epitaxial LaAlO3 layers, above a critical thickness, display 2DEL transport with mobilities similar to those of (001)SrTiO3. Moreover we show that epitaxial interfaces are not a prerequisite: conducting (110) interfaces with amorphous LaAlO3 and other oxides can also be prepared. These findings open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier doping.

Published in Scientific Reports (open access jounal of the Nature Publishing Group)

References in corpus (4)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface

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• Topological phases in layered pyrochlore oxide thin films along the [111] direction
• Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
• Fabrication of (111)-oriented Ca0.5Sr0.5IrO3/SrTiO3 superlattices; a designed playground for honeycomb physics
• Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states
• Epitaxial Growth of (1 1 1)-Oriented Spinel CoCr${}_2$O${}_4$/Al${}_2$O${}_3$ Heterostructures
• La interstitial defect-induced insulator-metal transition in oxide heterostructures LaAlO3/SrTiO3
• Gate voltage control of the $Al{O}_x$/$SrTi{O}_3$ interface electrical properties
• Electrostatic tuning of magnetism at the conducting (111) (La${}_{0.3}$Sr${}_{0.7}$)(Al${}_{0.65}$Ta${}_{0.35}$)/SrTiO${}_3$ interface