2D compressibility of surface states on 3D topological insulators
arXiv:1210.7241 · doi:10.1103/PhysRevB.87.041407
Abstract
We develop a theory for the compressibility of the surface states of 3D topological insulators and propose that surface probes of the compressibility via scanning single electron transistor microscopy will be a straightforward way to access the topological states without interference from the bulk states. We describe the single-particle nature of the surface states taking into account an accurate Hamiltonian for the bands and then include the contribution from electron--electron interactions and discuss the implications of the ultra-violet cutoff, including the universality of the exchange contribution when expressed in dimensionless units. We also compare the theory with experimentally obtained dμ/dn as extracted from angle-resolved photoemission spectroscopy measurements. Finally, we point out that interaction-driven renormalization of the Fermi velocity may be discernible via this technique.
5 pages, 5 figures, RevTeX
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Cited by in corpus (4)
- Many-body effects and possible superconductivity in the 2D metallic surface states of 3D topological insulators
- Multiphoton excitation and high-harmonics generation in topological insulator
- Landau theory of helical Fermi liquids
- Switchable quantized conductance in topological insulators revealed by the Shockley-Ramo theorem