Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
arXiv:1207.4745 · doi:10.1038/srep01075
Abstract
Silicene is a buckled monolayer of silicon. Its electronic properties are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We find for silicene a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that the combination of an electric field with intrinsic spin orbit interaction leads to quantum phase transitions at the charge neutrality point. This provides a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the effects in silicene are experimentally accessible. Therefore, silicene constitutes a model system for exploring the spin and valley physics not accessible in graphene due to the small spin orbit interaction.
4 pages 8 figures
References in corpus (12)
- The electronic properties of graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Valley filter and valley valve in graphene
- Unconventional Integer Quantum Hall effect in graphene
- Electronic structure of silicon-based nanostructures
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
- Unusual Microwave Response of Dirac Quasiparticles in Graphene
- Charge and spin Hall conductivity in metallic graphene
- Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
- Quantum Hall Effects in Silicene
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- Dirac Fermions in Blue-Phosphorus
- Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy
- Band inversion at critical magnetic fields in a silicene quantum dot
- Zitterbewegung in monolayer silicene in a magnetic field
- Magnetic Properties of Dirac Fermions in a Buckled Honeycomb Lattice
- Entropic uncertainty relations and topological-band insulator transitions in 2D gapped Dirac materials
- Beating pattern in quantum magnetotransport coefficients of spin-orbit coupled Dirac fermions in gated silicene
- Electrically tunable magnetoplasmons in a monolayer of silicene or germanene
- Integer quantum Hall effect and topological phase transitions in silicene
- Unconventional quantum Hall effect in Floquet topological insulators