Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO${}_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

References in corpus (7)

• Valley Polarization in Si(100) at Zero Magnetic Field
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Cited by in corpus (2)

• Spatially resolved resonant tunneling on single atoms in silicon
• Control of the ionization state of 3 single donor atoms in silicon