Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

Abstract

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

5 pages; supplementary material added

References in corpus (2)

• Spin-transfer-driven ferromagnetic resonance of individual nanomagnets
• Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

Cited by in corpus (7)

• Computing with spins and magnets
• Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect
• Spin-torque diode radio-frequency detector with voltage tuned resonance
• Magnetic phase transitions in Ta/CoFeB/MgO multilayers
• Gate voltage modulation of spin-Hall-torque-driven magnetic switching
• Giant magnetoelectric effect in magnetic tunnel junctions coupled to an electromagnetic environment
• Chirp spectroscopy applied to the characterization of Ferromagnetic Resonance in Magnetic Tunnel Junctions