Magnetic phase transitions in Ta/CoFeB/MgO multilayers
arXiv:1504.06716 · doi:10.1063/1.4921306
Abstract
We study thin films and magnetic tunnel junction nanopillars based on Ta/CoFeB/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the CoFeB/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.
References in corpus (7)
- Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO3 multilayers
- Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices
- Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
- Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
- Precise determination of the spectroscopic g-factor using broadband ferromagnetic resonance spectroscopy
- Single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions
- Time Domain Mapping of Spin Torque Oscillator Effective Energy
Cited by in corpus (5)
- Theory of inertial spin dynamics in anisotropic ferromagnets
- Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions
- Terahertz cavity magnon polaritons
- Self-stabilizing exchange-mediated spin transport
- Controlling selection rules for magnon scattering in nanomagnets by spatial symmetry breaking