123 citations · 162 across the 4 of their papers we have counts for
6 papers
A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories
Christopher Safranski, Jonathan Z. Sun, Andrew D. Kent
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a mag…
Demonstration of nanosecond operation in stochastic magnetic tunnel junctions
Christopher Safranski, Jan Kaiser, Philip Trouilloud +3
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dime…
Planar Hall driven torque in a FM/NM/FM system
Christopher Safranski, Jun-Wen Xu, Andrew D. Kent +1
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we…
Thermally driven two-magnet nano-oscillator with large spin-charge conversion
Bassim Arkook, Christopher Safranski, Rodolfo Rodriguez +8
Next-generation spintronic applications require material properties that can be hardly met by one material candidate. Here we demonstrate that by combining insulating and metallic…
Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions
Christopher Safranski, Jonathan Z. Sun
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Oft…
Magnetic phase transitions in Ta/CoFeB/MgO multilayers
I. Barsukov, Yu Fu, C. Safranski +8
We study thin films and magnetic tunnel junction nanopillars based on Ta/CoFeB/MgO multilayers by electrical transport and magnetometry measurements. These mea…