Strain-controlled band engineering and self-doping in ultrathin LaNiO films
arXiv:1204.2039 · doi:10.1103/PhysRevB.85.121106
Abstract
We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.
References in corpus (8)
- Orbital order and possible superconductivity in LaNiO3/LaMO3 superlattices
- Phenomenology of the normal state in-plane transport properties of high- cuprates
- Giant Tunneling Electroresistance Effect Driven by an Electrically Controlled Spin Valve at a Complex Oxide Interface
- Fermi surfaces, electron-hole asymmetry and correlation kink in a three-dimensional Fermi liquid LaNiO
- Termination Control of the Interface Dipole in LaSrMnO/Nb:SrTiO (001) Schottky Junctions
- Chemical control of orbital polarization in artificially structured transition-metal oxides: La2NiXO6 (X=B, Al, Ga, In) from first principles
- Unified electronic phase diagram for hole-doped high-Tc cuprates
- Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
Cited by in corpus (5)
- Physics of ultrathin films and heterostructures of rare earth nickelates
- Orbital Polarization in Strained LaNiO: Structural Distortions and Correlation Effects
- Field-effect diode based on electron-induced Mott transition in NdNiO3
- Electronic structure of buried LaNiO3 layers in (111)-oriented LaNiO3/LaMnO3 superlattices probed by soft x-ray ARPES
- Enhancement of the thermoelectric power by electronic correlations in bad metals: a study of the Kelvin formula