Logarithmic temperature dependence of Hall transport in granular metals

Abstract

We have measured the Hall coefficient $R_H$ and the electrical conductivity $\sigma$ of a series of ultrathin indium tin oxide films between 2 and 300 K. A robust $R_H$\,$\propto$\,ln$T$ law is observed in a considerably wide temperature range of 2 and $\sim$120 K. This ln$T$ dependence is explained as originated from the electron-electron interaction effect in the presence of granularity, as newly theoretically predicted. Furthermore, we observed a $\sigma$\,$\propto$\,ln$T$ law from 3 K up to several tens K, which also arose from the Coulomb interaction effect in inhomogeneous systems. These results provide strong experimental supports for the current theoretical concepts for charge transport in granular metals with intergrain tunneling conductivity $g_T$$\gg$1.

4 pages, 5 figures, Phys. Rev. B (accepted)

References in corpus (4)

• Granular Electronic Systems
• Hall resistivity of granular metals
• Hall Transport in Granular Metals and Effects of Coulomb Interactions
• Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires

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• Observation of double percolation transitions in Ag-SnO${}_2$ nanogranular films
• Electron-electron scatttering in Sn-doped indium oxide thick films
• Crossover of electron-electron interaction effect in Sn-doped indium oxide films
• Granular-composite-like electrical transport properties of polycrystalline cubic TaN${}_x$ thin films prepared by rf sputtering method
• Electrical transport properties of thick and thin Ta-doped SnO${}_2$ films
• Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three dimensional indium oxide thick films
• Universal Hall coefficient correction in strongly coupled Cr-SiO${}_2$ nanogranular metals
• The granularity effect in amorphous InGaZnO${}_4$ films prepared by rf sputtering method