Insulating phase of a two-dimensional electron gas in MgZnO/ZnO heterostructure below nu = 1/3

Abstract

We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state nu = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructure to be a prototype system for highly correlated quantum Hall physics.

17 pages, 3 figures

References in corpus (2)

• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass

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