Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology

Abstract

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive x-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. We use the extended uniform array of nanodots as a new test-bed for molecular electronics devices.

arXiv commentIn press. One file, including the manuscript and supplementary information

Cited by in corpus (10)

• A 17 GHz Molecular Rectifier
• Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study
• Conductance statistics from a large array of sub-10 nm molecular junctions
• Estimation of π-π Electronic Couplings from Current Measurements
• On the Mechanical and Electronic Properties of Thiolated Gold Nanocrystals
• Charge transport through redox active [H7P8W48O184]33- polyoxometalates self-assembled onto gold surfaces and gold nanodots
• Molecular Electronics: From Single-Molecule to Large-Area Devices
• Dynamical Coulomb Blockade as a Local Probe for Quantum Transport
• Electrical molecular switch addressed by chemical stimuli
• Influence of Molecular Organization on the Electrical Characteristics of π-conjugated Self-assembled Monolayers