44 citations · 58 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2024★ 2 cited
On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
Jules Duraz, Hassen Souissi, Maksym Gromovyi +12
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transm…
physics.app-ph2019★ 12 cited
Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials
T. Zhang, D. Guérin, F. Alibart +10
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances…
cond-mat.mes-hall2011★ 44 cited
Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology
N. Clement, G. Patriarche, K. Smaali +5
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing…