Raman spectroscopy on etched graphene nanoribbons
arXiv:1105.1001 · doi:10.1063/1.3561838
Abstract
We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Chaotic Dirac billiard in graphene quantum dots
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Raman Spectroscopy of Graphene Edges
- Coulomb blockade in graphene nanoribbons
- Impact of the electron-electron correlation on phonon dispersions: failure of LDA and GGA functionals in graphene and graphite
- Conductance Quantization in Graphene Nanoribbons
- Raman imaging of doping domains in graphene on SiO2
- Transport gap in side-gated graphene constrictions
- Electronic Structure of gated graphene and graphene ribbons