The efficient spin injector scheme based on Heusler materials

Abstract

We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principal calculations verify that interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediate between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.

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• Spintronics: Fundamentals and applications
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Cited by in corpus (16)

• Computational Investigation of Half-Heusler Compounds for Spintronics Applications
• Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa
• Computational Investigation of Inverse-Heusler compounds for Spintronics Applications
• Data Storage: Review of Heusler Compounds
• Ab-initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets
• Native defects in the Co${}_2$Ti$Z$ ($Z=$ Si, Ge, Sn) full Heusler alloys: formation and influence on the thermoelectric properties
• Half-metallicity and magnetism in the Co${}_2$MnAl/CoMnVAl heterostructure
• Spin injection from a half-metal at finite temperatures
• New spin injection scheme based on spin gapless semiconductors: A first-principles study
• Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/Co${}_2$TiSi/Al and Al/Co${}_2$TiGe/Al contacts
• Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction
• Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures and Fermi levels
• Electronic, magnetic, and optical properties of Mn-doped GaSb: a first-principles study
• Magnetic 2D electron liquid at the surface of Heusler semiconductors
• Spin Dependent Lifetimes and Spin-orbit Hybridization Points in Heusler Compounds
• First principle study of electronic, magnetic and thermoelectric properties of Co${}_2$YPb (Y = Tc, Ti, Zr and Hf) full Heusler: Application to embedded automotive systems