Raman 2D-Band Splitting in Graphene: Theory and Experiment

Abstract

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due to the contribution of two distinct double resonance scattering processes (inner and outer) in the Raman signal. The splitting depends on the direction of the applied strain and the polarization of the incident light. The results give new insight into the nature of the 2D band and have significant implications for the use of graphene as reinforcement in composites since the 2D mode is crucial to assess how effectively graphene uptakes an applied stress or strain.

30 pages, 5 figues, published in ACS Nano

References in corpus (9)

• The Raman Fingerprint of Graphene
• Ripple Texturing of Suspended Graphene Atomic Membranes
• Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite
• Subjecting a graphene monolayer to tension and compression
• Impact of the electron-electron correlation on phonon dispersions: failure of LDA and GGA functionals in graphene and graphite
• Compression Behavior of Single-layer Graphene
• Gauge field induced by ripples in graphene
• Graphene under hydrostatic pressure
• Splitting of the Raman $2D$ band of graphene subjected to strain

Cited by in corpus (13)

• Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
• Estimation of Young's Modulus of Graphene by Raman Spectroscopy
• From Graphene to Carbon Fibres: Mechanical Deformation and Development of a Universal Stress Sensor
• The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition
• All-Optical Blister Test of Suspended Graphene Using Micro-Raman Spectroscopy
• Suspended Monolayer Graphene under True Uniaxial Deformation
• Wrinkled few-layer graphene as highly efficient load bearer
• In-situ strain tuning in hBN-encapsulated graphene electronic devices
• Strain-tunable band gap in graphene/h-BN hetero-bilayer
• Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene
• Stress and charge transfer in uniaxially strained CVD graphene
• Strain-induced conduction gap in vertical devices made of twisted graphene layers
• Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction