Temperature and Voltage Driven Tunable Metal-Insulator Transition in Individual $W_x{V}_{1-x}{O}_2$ nanowires

Abstract

Results from transport measurements in individual $W_x{V}_{1-x}{O}_2$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition temperature decreases with increasing $W$ content at a pronounced rate of - (48-56) K/$at.$, suggesting a significant alteration of the phase diagram from the bulk. These nanowires can also be driven through a voltage-driven MIT and the temperature dependence of the insulator to metal and metal to insulator switchings are studied. While driving from an insulator to metal, the threshold voltage at which the MIT occurs follows an exponential temperature dependence ($V_{TH\uparrow}\propto\exp(\nicefrac{-T}{T_{0}})) $whereas driving from a metal to insulator, the threshold voltage follows $V_{TH\downarrow }\propto \sqrt{T_c-T}$ and the implications of these results are discussed.

arXiv comment4 pages, 4 figures

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• Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams
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• Proliferation of metallic domains caused by inhomogeneous heating near the electrically-driven transition in VO${}_2$ nanobeams
• Direct evidence of tungsten clustering in W${}_{\text{0.02}}$V${}_{\text{0.98}}$O${}_{\text{2}}$ thin films and its effect on the metal-to-insulator transition
• Correlated Insulator Collapse due to Quantum Avalanche via In-Gap Ladder States
• On the metal-insulator-transition in vanadium dioxide
• Spatial behavior in a Mott insulator near the voltage-driven resistive transition
• Nonequilibrium thermal state of a voltage-biased Mott insulator