Growth of Large-Area Graphene Films from Metal-Carbon Melts
arXiv:1011.4081 · doi:10.1063/1.3498815
Abstract
We have demonstrated a new method for the large-area graphene growth, which can lead to a scalable low-cost high-throughput production technology. The method is based on growing single-layer or few-layer graphene films from a molten phase. The process involves dissolving carbon inside a molten metal at a specified temperature and then allowing the dissolved carbon to nucleate and grow on top of the melt at a lower temperature. The examined metals for the metal - carbon melts included copper and nickel. For the latter, pristine single layer graphene was grown successfully. The resulting graphene layers were subjected to detailed microscopic and Raman spectroscopic characterization. The deconvolution of the Raman 2D band was used to accurately determine the number of atomic planes in the resulting graphene layers and access their quality. The results indicate that our technology can provide bulk graphite films, few-layer graphene as well as high-quality single layer graphene on metals. Our approach can also be used for producing graphene-metal thermal interface materials for thermal management applications.
21 pages, 9 figures
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Ultrahigh electron mobility in suspended graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Ripple Texturing of Suspended Graphene Atomic Membranes
- Graphene Segregated on Ni surfaces and Transferred to Insulators
- Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
- Flicker Noise in Bilayer Graphene Transistors