Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

Abstract

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.

16 pages, 6 figures

References in corpus (1)

• Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

Cited by in corpus (4)

• Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors
• Quantum-interference transport through surface layers of indium-doped ZnO nanowires
• Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors
• Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO${}_4$ thin-film transistors