Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials
arXiv:0812.4123 · doi:10.1103/PhysRevLett.102.086403
Abstract
As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O-vacancies and Zn-interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.
arXiv comment12 pages, 4 figures
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